Display device

ABSTRACT

The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor  109 . An oxide film  110  as an insulating material is formed on the oxide semiconductor  109 . A gate electrode  111  is formed on the oxide film  110 . A first electrode  115  is connected to a drain of the first TFT via a first through hole formed in the oxide film  110 . A second electrode  116  is connected to a source of the first TFT via a second through hole formed in the oxide film  110.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.16/011,725 filed on Jun. 19, 2018, which, in turn, is a continuation ofU.S. application Ser. No. 15/585,401 (now U.S. Pat. No. 10,026,754),filed on May 3, 2017. Further, this application claims priority fromJapanese Patent Application JP 2016-100493 filed on May 19, 2016, theentire contents of which are hereby incorporated by reference into thisapplication.

BACKGROUND OF THE INVENTION 1. Field of the Invention

The present invention relates to a display device, and in particular, toa display device employing hybrid structure formed of both a TFT usingpoly-Si and a TFT using an oxide semiconductor.

2. Description of the Related Art

In a liquid crystal display device, a TFT substrate on which pixels eachhaving pixel electrodes, a thin-film transistor (TFT), etc. are formedlike a matrix and a counter substrate are arranged to face each otherand a liquid crystal is sandwiched between the TFT substrate and thecounter substrate. The liquid crystal display device forms an image bycontrolling the light transmittance of liquid crystal molecules inregard to each pixel. On the other hand, an organic electroluminescence(EL) display device forms a color image by use of a self-luminousorganic EL layer and a TFT that are arranged in each pixel. The organicEL display device needs no backlight, and thus is advantageous for thethinning of the device.

Low temperature poly-Si (LTPS) has high carrier mobility and thus issuitable as a TFT for a drive circuit. In contrast, oxide semiconductorshave high OFF resistance, and the OFF current of a TFT can be reduced byusing an oxide semiconductor for the TFT.

JP-A-2013-175718 and JP-A-2011-54812 can be taken as examples of priorart literature having a description of a TFT using an oxidesemiconductor. JP-A-2013-175718 describes a configuration in whichmetallic oxide is formed on an oxide semiconductor constituting thechannel and is used as a gate insulation film. JP-A-2011-54812 describesthe use of a metallic oxide layer or a semiconductor layer as asacrificial layer for channel etching in a bottom-type TFT using anoxide semiconductor

SUMMARY OF THE INVENTION

The TFT used for the switching of a pixel is required to keep down itsleak current. The use of an oxide semiconductor for the TFT can reducethe leak current. In the following description, a type of oxidesemiconductor that is optically transparent and not crystalline will bereferred to as TAOS (transparent amorphous oxide semiconductor).Examples of TAOS include indium gallium zinc oxide (IGZO), indium tinzinc oxide (ITZO), zinc oxide nitride (ZnON), indium gallium oxide(IGO), and so forth. However, TAOS has low carrier mobility, and thusthere are cases where it is difficult to form a drive circuit to beinstalled in a display device with TFTs using TAOS. The term “TAOS” willhereinafter be used also in the meaning of a TFT using TAOS.

In contrast, a TFT formed with LTPS has high carrier mobility, and thusthe drive circuit can be formed with TFTs using LTPS. The term “LTPS”will hereinafter be used also in the meaning of a TFT using LTPS.However, in cases where LTPS is used for a switching TFT in a pixel, twoLTPSs are usually used in series connection since LTPS has high leakcurrent.

Therefore, it is rational to use TAOS as the switching element of eachpixel in the display region and LTPS as each TFT of a peripheral drivecircuit. However, LTPS and TAOS have material characteristics differentfrom each other and there is a problem in forming them on the samesubstrate. Specifically, in cases where a source electrode and a drainelectrode are formed on LTPS, the LTPS has to be cleaned withhydrofluoric acid (HF) in order to remove surface oxide. However, it isimpossible to use the same process for TAOS since TAOS is dissolved byhydrofluoric acid (HF).

The object of the present invention is to resolve the above-describedproblem and thereby make it possible to form a TFT made with LTPS and aTFT made with TAOS on the same substrate.

Means for Solving the Problems

Examples of specific means of the present invention, overcoming theabove-described problem, are as follows:

(1) A display device including a substrate having a display region inwhich pixels are formed. In the display device, the pixel includes afirst TFT using an oxide semiconductor, an oxide film as an insulatingmaterial is formed on the oxide semiconductor, a gate electrode isformed on the oxide film, a first electrode is connected to a drain ofthe first TFT via a first through hole formed in the oxide film, and asecond electrode is connected to a source of the first TFT via a secondthrough hole formed in the oxide film,

(2) The display device according to (1), in which a wall of the throughhole formed in the oxide film has a first taper θ1 on a side opposite tothe oxide semiconductor and a second taper θ2<θ1 on the oxidesemiconductor's side.

(3) The display device according to (1), wherein the oxide film is AlOx.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view of a liquid crystal display device to which thepresent invention is applied.

FIG. 2 is a cross-sectional view taken along the line A-A in FIG. 1.

FIG. 3 is a cross-sectional view showing a first production stepaccording to the present invention.

FIG. 4 is a cross-sectional view showing a second production stepaccording to the present invention.

FIG. 5 is a cross-sectional view showing a third production stepaccording to the present invention.

FIG. 6 is a cross-sectional view showing a fourth production stepaccording to the present invention.

FIG. 7 is a cross-sectional view showing a fifth production stepaccording to the present invention.

FIG. 8 is a cross-sectional view showing characteristics of the presentinvention.

FIG. 9 is a plan view of a sacrificial layer.

FIG. 10 is a cross-sectional view showing the shape of a through hole inthe sacrificial layer.

FIG. 11 is a cross-sectional view showing details of the shape of thethrough hole in the sacrificial layer.

FIG. 12 is a cross-sectional view showing a process of two-stageetching.

FIG. 13 is a cross-sectional view showing a problem arising when etchingis carried out by using hydrofluoric acid alone.

FIG. 14 is a table showing specifications of samples of AlOx.

FIG. 15 is a graph showing binding energy of an Al atom.

FIG. 16 is a graph showing binding energy of an oxygen atom.

FIG. 17 is a cross-sectional view showing the configuration of TFTsaccording to a second embodiment of the present invention.

FIG. 18 is a plan view of a sacrificial layer in the second embodiment.

FIG. 19 is a cross-sectional view showing the configuration of TFTsaccording to a third embodiment of the present invention.

FIG. 20 is a cross-sectional view of a liquid crystal display device.

FIG. 21 is a plan view of an organic EL display device.

FIG. 22 is a cross-sectional view taken along the line B-B in FIG. 21.

FIG. 23 is a cross-sectional view of the organic EL display device.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

The contents of the present invention will be described in detail belowby using some embodiments.

First Embodiment

FIG. 1 is a plan view of a liquid crystal display device 1 to which thepresent invention is applied. FIG. 2 is a cross-sectional view takenalong the line A-A in FIG. 1. In FIGS. 1 and 2, a TFT substrate 100 anda counter substrate 200 are formed to face each other and a liquidcrystal is sandwiched between the TFT substrate 100 and the countersubstrate 200. A lower polarizing plate 130 is bonded to a lower surfaceof the TFT substrate 100, while an upper polarizing plate 230 is bondedto an upper surface of the counter substrate 200. The combination of theTFT substrate 100, the counter substrate 200, the lower polarizing plate130 and the upper polarizing plate 230 will be referred to as a liquidcrystal display panel 500.

The TFT substrate 100 is formed to be larger than the counter substrate200. A part of the TFT substrate 100 not paired with the countersubstrate 200 is formed as a terminal unit 150, to which a flexiblewiring board 160 for supplying signals and electric power from theoutside to the liquid crystal display device is connected. The liquidcrystal display panel 500 is not self-luminous, and thus a backlight 400is arranged on the back of the liquid crystal display panel 500.

The liquid crystal display device can be divided into a display region10 and a peripheral region 20 as shown in FIG. 1. In the display region10, a great number of pixels are formed like a matrix, and each pixelincludes a switching TFT. In the peripheral region 20, a drive circuitfor driving scan lines, image signal lines, etc. is formed.

The TFTs used for the pixels are required to keep down their leakcurrent and thus it is rational to use TAOS for these TFTs, while theTFTs used for the peripheral drive circuit are required to have highcarrier mobility and thus it is rational to use LTPS for these TFTs. Incases where the LTPS is connected to a drain electrode or a sourceelectrode in an LTPS process, it is necessary to form a through holethrough an insulation film covering the LTPS and also perform thecleaning with hydrofluoric acid (HF) in order to remove surface oxide onthe LTPS in the through hole.

However, if the same process is applied to the TFTs using TAOS, the TAOSis dissolved by hydrofluoric acid (HF) and the TFTs cannot be formed.Therefore, this problem has to be resolved in order to form TFTs madewith LTPS and TFTs made with TAOS on the same substrate. FIG. 8 shows aconfiguration according to the present invention that resolves thisproblem. FIGS. 3 to 7 show a process implementing the configuration ofFIG. 8.

In FIG. 3, a first base film 101 and a second base film 102 aresuccessively formed on the TFT substrate 100 made with glass, andamorphous Si (a-Si) 1031 is formed on the second base film 102. Thefirst base film 101 is formed with silicon nitride SiNx, for example,and the second base film 102 is formed with silicon oxide SiOx. Thefirst base film 101 and the second base film 102 prevent a semiconductorlayer from being contaminated by impurities contained in glass. The a-Si1031 is formed on the second base film 102 up to a thickness ofapproximately 50 nm. The first base film 101, the second base film 102and the a-Si 1031 are formed successively by means of chemical vapordeposition (CVD).

Thereafter, the a-Si 1031 is irradiated with an excimer laser andthereby transformed into poly-Si 103. FIG. 4 is a cross-sectional viewshowing a state in which the patterning of a semiconductor layer 103transformed into the poly-Si 103 is finished. The poly-Si willhereinafter be referred to as LTPS 103.

A gate insulation film 104 is formed to cover the LTPS 103. The gateinsulation film 104 is a SiOx film formed by CVD by usingtetraethoxysilane (TEOS) as the raw material. A gate electrode 105 isformed on the gate insulation film 104. The gate electrode 105 is formedwith Al alloy, Mo, W, or a laminated film of some of these materials, orthe like.

In FIGS. 5 to 8, the TFT using TAOS is shown in a right-hand part of thedrawing. In the region where the TAOS TFT is formed, a light blockingfilm 106 is formed concurrently with the gate electrode 105. This isbecause TAOS is scheduled to be formed in the display region to beexposed to light from the backlight and thus it is necessary to preventinflow of photocurrent into TAOS. Parenthetically, in cases where anLTPS TFT is used for the display region, it is desirable to form a lightblocking film under the first base film 101. Metal constituting the gateelectrode 105 or the light blocking film 106 is formed by sputtering andthereafter patterned by photolithography.

Thereafter, as shown in FIG. 6, a first interlayer insulation film 107is formed with SiNx to cover the gate electrode 105 and the lightblocking film 106, and a second interlayer insulation film 108 of SiOxis formed on the first interlayer insulation film 107. While the firstand second interlayer insulation films 107 and 108 are formed for theinsulation between a TAOS layer 109 and the gate electrode 105 or thelight blocking film 106, the first and second interlayer insulationfilms 107 and 108 function also as base films for the TAOS layer 109.

The TAOS layer 109 is formed on the second interlayer insulation film108, and a sacrificial layer 110 is formed on the TAOS layer 109 withaluminum oxide AlOx, for example. Thereafter, the TAOS layer 109 and thesacrificial layer 110 are patterned as shown in FIG. 7. The TAOS 109 isformed with IGZO, ITZO, IGO or the like or alloy of some of thesematerials, for example. The thickness of the TAOS 109 is 10 to 100 nm,for example.

The sacrificial layer 110 is desired to be formed with oxide,specifically, AlOx, and the thickness of the sacrificial layer 110 isdesired to be 5 to 50 nm. If the film thickness of the sacrificial layer110 is too small, the sacrificial layer 110 can becomes discontinuousand hydrofluoric acid can permeate into the TAOS 109. Conversely, if thesacrificial layer 110 is thick, the formation of the sacrificial layer110 takes a long time, or the TFT becomes likely to fall into depletion.

On the other hand, the etching rate of AlOx used for the sacrificiallayer 110 varies greatly depending on the film quality. Therefore, thedetermination of the appropriate film thickness of the sacrificial layer110 has to be made in consideration of the relationship with the etchingrate. The duration of the cleaning of the LTPS 103 with hydrofluoricacid is 30 seconds or less. Thus, the film thickness of the sacrificiallayer 110 required in consideration of the approximately 30 seconds ofcleaning is shown in the following Table 1:

TABLE 1 Etching rate of 0.5% DHF of Film thickness of sacrificial layersacrificial layer required (nm/min) (nm) 2 1 4 2 10 5 50 25 100 50 15075 200 100

Table 1 shows evaluation of the etching rate of 0.5% dilutedhydrofluoric acid used for the cleaning of the through holes 113 of theLTPS 103. As shown in Table 1, the appropriate film thickness of thesacrificial layer 110 is approximately 5 to 50 nm in consideration ofthe deposition rate of the sacrificial layer, resistance to the etchingsolution, etc. Incidentally, the sacrificial layer 110 may be formed assome separate layers. By employing such a multilayer film, the formationof film defects by foreign substances can be restrained.

The patterning of the sacrificial layer 110 and the TAOS 109 isperformed by C1-based dry etching or wet etching by use of oxalic acid,a developing solution, or the like. Since the sacrificial layer 110 andthe TAOS 109 are patterned at the same time, it is desirable to avoidthe use of an etching solution having extremely high etching rate onlyfor the TAOS 109.

Thereafter, as shown in FIG. 8, a gate electrode 111 for the TAOS TFT isformed on the sacrificial layer 110. The gate electrode 111 is formed bythe same method as the gate electrode 105. Specifically, metal to becomethe gate electrode 111 is deposited by sputtering and thereafterpatterned. In the configuration shown in FIG. 8, the sacrificial layer110 made with AlOx constitutes a gate insulation film.

An inorganic passivation film 112 is formed to cover the TAOS 109, thesacrificial layer 110 and the gate electrode 111. Thereafter, as shownin FIG. 8, the through holes 113 for forming the drain electrode and thesource electrode on the TFT made with LTPS 103 is formed to penetratethe inorganic passivation film 112, the second interlayer insulationfilm 108, the first interlayer insulation film 107 and the gateinsulation film 104. Further, through holes 114 for forming the drainelectrode and the source electrode on the TFT made with TAOS 109 areformed through the inorganic passivation film 112 and the sacrificiallayer 110. The through holes 113 and the through holes 114 are formedconcurrently by dry etching.

The dry etching is carried out by using CF-based gas (CF4) or CHF-basedgas (CHF3). The etching rate of the dry etching is 70 nm/min for SiOxand 6 nm/min for AlOx, for example, and is extremely low for AlOx incomparison with SiOx. Therefore, even though the dry etching for thethrough holes 113 on the LTPS's side are carried out through four layersand the dry etching for the through holes 114 on the TAOS's side arecarried out through only two layers, AlOx remains on the through holes114's side and the function as the sacrificial layer 110 can bemaintained.

In FIG. 8, while the through holes 113 on the LTPS 103's side arecleaned with hydrofluoric acid, the through holes 114 on the TAOS 109'sside are also cleaned with hydrofluoric acid at the same time. In thepresent invention, AlOx remains on the through holes 114 on the TAOS109's side, and thus hydrofluoric acid does not make contact with theTAOS 109 and destruction of the TFT on the TAOS 109's side is avoided.

The Etching rate by using 5% hydrofluoric acid is 4 to 14 nm/min forAlOx, 6000 nm/min or higher for IGZO, 480 nm/min for ITZO, and 0 nm/minfor poly-IGO. Although poly-IGO is hardly etched, this is a value incases where poly-IGO is a bulk crystal. When poly-IGO is in a thin filmstate, hydrofluoric acid can permeate through the grain boundary anddestroy the TAOS 109.

FIG. 9 is a plan view of the sacrificial layer 110. The through hole 114is formed on the left-hand and right-hand sides of the sacrificial layer110, and a drain electrode 115 and a source electrode 116 are formedrespectively in the through holes 114 on the left-hand and right-handsides. The through holes 114 for forming the drain electrode 115 and thesource electrode 116 are formed Δx and Δy inside the edges of thesacrificial layer 110. This is for preventing hydrofluoric acid fromreaching the TAOS layer 109 via the periphery of the sacrificial layer110 and dissolving the TAOS layer 109 in the etching by use ofhydrofluoric acid.

The region indicated by the reference character A in FIG. 8, that is,the cross-sectional shape of the through hole 114 formed in thesacrificial layer 110, is important. FIG. 10 is a cross-sectional viewof the through hole 114 in the sacrificial layer 110 corresponding tothe region A in FIG. 8. As shown in FIG. 10, the through hole 114 istapered in two stages. The taper angle of the through hole 114 in thesacrificial layer 110 is larger on the upper surface's side of thesacrificial layer 110 than on the TAOS 109's side. FIG. 11 is anenlarged sectional view of the part B in FIG. 10, indicating thedefinition of the taper angle. In FIG. 11, the taper angle θ1 of thethrough hole on the upper surface's side of the sacrificial layer 110 islarger than the taper angle θ2 on the TAOS 109's side.

This is the result of the two-stage etching for forming the throughholes 114. The process of the two-stage etching is shown in FIG. 12. Theleft-hand side of FIG. 12 shows the state after the hydrofluoric acidcleaning. This corresponds to a first-stage etching. Thereafter, asshown in the right-hand side of FIG. 12, a second-stage etching iscarried out by using an aqueous solution of tetramethylammoniumhydroxide (TMAH).

TMAH is used generally as a developing solution. The etching rate ofAlOx by use of TMAH is as low as 7 nm/min. Further, even whenover-etching continues for a relatively long time, the decrease in TAOS109 can be kept down to an extremely small amount. The two-stage etchingis made possible by properly setting the thickness of the AlOxsacrificial layer 110. Incidentally, the etching solution for thetwo-stage etching is not limited to TMAH; a different etching solutionis also usable as long as its etching rate for AlOx is lower than thatof hydrofluoric acid.

In contrast, if the sacrificial layer 110 is etched by usinghydrofluoric acid alone, eaves of the sacrificial layer 110 are formedin the through hole as shown in FIG. 13 due to the great etching ratedifference between the sacrificial layer 110 and the TAOS 109. If thethrough hole is formed in such a shape, problems arise such as poorelectrical contact at the drain or the source and a drop in thereliability of the TAOS TFT.

FIG. 14 is a table showing film quality and characteristics of each typeof AlOx used as the sacrificial layer 110. The samples A, B and C differfrom each other in the composition ratio of AlOx, that is, the ratioO/Al. For the three types of AlOx, evaluation of chemical bond status ofAl and O, the refractive index and the film stress is summarized in thetable. The samples A and B have a slightly high water content in AlOx incomparison with the sample C.

A characteristic feature of AlOx found in FIG. 14 is that only a slightchange in the composition ratio leads to a change in the film stress ofAlOx from compressive stress to tensile stress. On the other hand, therefractive index increases with the increase in the compactness of thefilm. Thus, the sample C can be evaluated as a compact film.

The compactness of the film is influenced by the water content. FIGS. 15and 16 show the result of X-ray photoelectron spectroscopy (XPS)measurement of the samples. In FIGS. 15 and 16, the horizontal axisrepresents the binding energy and the vertical axis represents thenumber of electrons emitted at each level of energy.

FIG. 15 shows the result of measurement of the binding energy between anAl atom and oxygen in regard to an electron in the 2p orbital of the Alatom. In this regard, the three samples exhibited substantially the samecharacteristics as shown in FIG. 15.

FIG. 16 shows the result of measurement in regard to an electron in the1s orbital of O. The three samples exhibited substantially the sameresults in regard to the O—Al bond and the O—H bond, whereas themagnitude of the binding energy deriving from water indicated by“O-ADSORBED WATER” is low in the sample C compared to the samples A andB. This indicates a low water content in AlOx.

In the experimental result, the sample C, having a low water content anda high refractive index, proved to exhibit stable characteristicsrequired of the sacrificial layer 110. Corresponding to this result, therefractive index of AlOx used as the sacrificial layer 110 is desired tobe in a range from 1.58 to 1.65. Incidentally, the film stress of AlOxchanges greatly depending on a slight change in the composition ratiobetween Al and O or the water content as shown in FIG. 14. It is alsopossible to use these characteristics for the adjustment of the filmstress.

The following Table 2 shows examples of the combination of the TAOS 109and the sacrificial layer 110. The TAOS 109 can be formed not only as asingle layer but also as multiple layers. While AlOx is used for thesacrificial layer 110, formation of AlOx as multiple layers alsoachieves the effect of reducing film defects caused by foreignsubstances.

TABLE 2 TAOS Sacrificial layer a-IGZO a-AIOx a-IGZO\a-IGZO (low Zn)a-AIOx a-IGZO\a-ITZO a-AIOx a-IGZO\a-IGO a-AIOx a-IGZO a-AIOx havingorientation IGZO having orientation a-AIOx IGZO having orientationa-AIOx etc. having orientation

While the “orientation” in Table 2 is synonymous with crystallinity, inthe TAOS 109 and the sacrificial layer 110 both being thin films, acrystal does not grow in the film thickness direction and the crystalgrowth occurs only in film surface directions. The term “orientation” isused to express this situation.

As described above, by use of the present invention, even when thethrough holes 113 on the LTPS 103's side are cleaned with hydrofluoricacid, the destruction of a TFT does not occur at the through holes 114on the TAOS 109's side, and thus it becomes possible to form TFTs madewith LTPS 103 and TFTs made with TAOS 109 on the same substrate.Accordingly, a display device of high image quality and high reliabilitycan be realized.

Second Embodiment

FIG. 17 is a cross-sectional view showing a second embodiment of thepresent invention. FIG. 17 differs from FIG. 8 of the first embodimentin that the sacrificial layer 110 covers also the side faces of the TAOS109. With this configuration, even when hydrofluoric acid permeatestoward a side face of the TAOS 109, the side face of the TAOS 109 isprotected by the sacrificial layer 110 and the influence on the TAOS 109can be avoided.

Consequently, as shown in FIG. 18, the width of the through holes 114 inwhich the drain electrode 115 and the source electrode 116 are formedcan be made larger than the width yy of the sacrificial layer 110.Namely, the channel width of the TFT can be increased and the ON currentcan be increased.

Incidentally, while employing a configuration like FIG. 17 for the TAOS109 and the sacrificial layer 110 leads to an increase in the number ofsteps, the degree of freedom of the process can be increased. Putanother way, the tolerance of the process can be increased. Further,since the channel width can be increased, the TFT size can be reducedcorrespondingly and the pixel density can also be increased.

Third Embodiment

FIG. 19 is a cross-sectional view showing a third embodiment of thepresent invention. FIG. 19 differs from FIG. 8 of the first embodimentin that the gate insulation film of the TFT made with TAOS 109 isconstituted of not only the sacrificial layer 110 but also a gateinsulation film 117 made with SiOx. By the addition of the gateinsulation film 117 made with SiOx, the degree of freedom of the filmthickness of the sacrificial layer 110 made with AlOx can be increased.Put another way, it becomes possible to determine the film thickness andthe film quality of the sacrificial layer 110 in consideration not ofthe insulation characteristic but exclusively of the threshold of theTAOS TFT and the etching characteristic of the sacrificial layer.

Fourth Embodiment

FIG. 20 is a cross-sectional view showing a case where the TFTs madewith TAOS described in the first through third embodiments are employedfor the display region. In FIG. 20, a TFT array layer 120 is formed onthe TFT substrate 100. The TFT array layer 120 has the layered structureof the TAOS TFT shown in FIG. 8, FIG. 19 or the like. An organicpassivation film is formed on the TFT array layer 120.

FIG. 20 shows an example of a liquid crystal display device of thein-plane switching (IPS) type, in which a common electrode 121 is formedin a planar shape on the TFT array layer 120. A capacitive insulationfilm 122 is formed to cover the common electrode 121, and pixelelectrodes 123 are formed on the capacitive insulation film 122. Thepixel electrodes 123 are formed in a shape like comb teeth or stripes.An alignment layer 124 for aligning liquid crystal molecules 301 in theinitial alignment is formed to cover the pixel electrodes 123.

When an image signal is applied between each pixel electrode 123 and thecommon electrode 121, lines of electric force develop as indicated bythe arrows, by which the liquid crystal molecules 301 are rotated, thetransmittance of a liquid crystal layer 300 is controlled, and an imageis formed.

In FIG. 20, a counter substrate 200 is arranged to sandwich the liquidcrystal layer 300. The counter substrate 200 has a color filter 201 anda black matrix 202 formed thereon. An overcoat film 203 is formed tocover the color filter 201 and the black matrix 202, and an alignmentlayer 204 for aligning the liquid crystal molecules 301 in the initialalignment is formed on (under) the overcoat film 203.

In the liquid crystal display device, when an image signal is written toa pixel electrode 123, a voltage is held for the period of one frame byretention capacitance formed by the pixel electrode 123, the commonelectrode 121 and the capacitive insulation film 122. If the leakcurrent in this period is high, the voltage of the pixel electrode 123changes, a flicker or the like occurs, and it becomes impossible to forman excellent image. By employing the TAOS TFTs according to the presentinvention, a liquid crystal display device of low leak current and highimage quality can be realized.

Fifth Embodiment

The combinations of LTPS TFTs and TAOS TFTs described in the firstthrough third embodiments are applicable also to organic EL displaydevices. FIG. 21 is a plan view of an organic EL display device 2. InFIG. 21, a display region 10 and a peripheral circuit region 20 areformed. Organic EL drive TFTs and switching TFTs are formed in thedisplay region 10. The TAOS TFTs with low leak current are suitable forthe switching TFTs. The peripheral drive circuit, which is formed withTFTs, is formed mainly with LTPS TFTs.

In FIG. 21, an antireflective polarizing plate 220 is bonded so as tocover the display region 10. Since a reflecting electrode is formed inthe organic EL display device, the antireflective polarizing plate 220is used to restrain the reflection of external light. A terminal unit150 is formed in a part other than the display region 10. A flexiblewiring board 160 for supplying electric power and signals to the organicEL display device is connected to the terminal unit 150.

FIG. 22 is a cross-sectional view taken along the line B-B in FIG. 21.In FIG. 22, a display element layer 210 including an organic EL layer isformed on the TFT substrate 100. The display element layer 210 is formedcorresponding to the display region 10 shown in FIG. 21. Since theorganic EL material is decomposed by water, a protective layer 215covering the display element layer 210 is formed with SiNx or the likein order to prevent the entry of water from the outside. The polarizingplate 220 is bonded onto the protective layer 215. The terminal unit 150is formed in a part other than the display element layer 210, and theflexible wiring board 160 is connected to the terminal unit 150.

FIG. 23 is a cross-sectional view of the display region of the organicEL display device. In FIG. 23, the TFT array layer 120 is formed on theTFT substrate 100. The TFT array layer 120 includes the layeredstructure of the TAOS TFT shown in FIG. 8, FIG. 19 or the like. Anorganic passivation film is formed on the TFT array layer 120.

In FIG. 23, a reflecting electrode 211 is formed with Al alloy or thelike on the TFT array layer 120, and a lower electrode 212 as thecathode is formed with ITO or the like on the reflecting electrode 211.Formed on the lower electrode 212 is an organic EL layer 213. Theorganic EL layer 213 is made up of an electron injection layer, anelectron transport layer, a light emission layer, a hole transportlayer, and a hole injection layer, for example. Formed on the organic ELlayer 213 is an upper electrode 214 as the anode. The upper electrode214 is formed with IZO (Indium Zinc Oxide), ITO (Indium Tin Oxide) orthe like as a transparent conductive film. There are also cases wherethe upper electrode 214 is formed of a thin film of metal such assilver. The protective layer 215 is formed with SiNx or the like tocover the upper electrode 214, and the polarizing plate 220 forpreventing the reflection is bonded onto the protective layer 215 byusing an adhesive material 216.

While various types of TFTs such as drive TFTs and switching TFTs areformed in the TFT array layer, employing the present invention makes itpossible to form LTPS TFTs and TAOS TFTs in a common process, and thusvarious combinations of LTPS TFTs and TAOS TFTs become usable.Accordingly, an organic EL display device excelling in the image qualityand capable of reducing the electric power consumption can be realized.

While TAOS TFTs are used for the display region and LTPS TFTs are usedfor the peripheral drive circuit in the above description, it is alsopossible to add TAOS TFTs to the peripheral circuit or to add LTPS TFTsto the display region depending on the product specifications.

What is claimed is:
 1. A display device comprising; a substrate having adisplay region in which pixels are formed and a peripheral region inwhich a drive circuit is formed, a first TFT having an oxidesemiconductor, and a second TFT having a silicon semiconductor, whereina first insulating film is formed on the oxide semiconductor, a firstgate electrode of the first TFT is formed on the first insulating film,a passivation film is formed on the first gate electrode and the firstinsulating film, a first electrode is connected to a drain of the firstTFT via a first through hole formed in the first insulating film and thepassivation film, a second electrode is connected to a source of thefirst TFT via a second through hole formed in the first insulating filmand the passivation film, each of the pixels includes the first TFThaving the oxide semiconductor, the drive circuit includes the secondTFT having the silicon semiconductor, an interlayer insulation film isformed between the first TFT and the second TFT, the second TFT isarranged below the first TFT in a cross sectional view, a secondinsulating film is formed on the silicon semiconductor, a second gateelectrode of the second TFT is formed on the second insulating film, thesilicon semiconductor is formed between the second insulating film andthe substrate, and a metal film under the first TFT is formed on a samelayer where the second gate electrode of the second TFT is formed. 2.The display device according to claim 1, wherein a thickness of thefirst insulating film is 5 to 50 nm.
 3. The display device according toclaim 1, wherein the interlayer insulation film includes a firstinterlayer insulation film and a second interlayer insulation film. 4.The display device according to claim 1, wherein the display regionfurther includes another TFT having another silicon semiconductor. 5.The display device according to claim 1, wherein the first insulatingfilm is AlOx.
 6. The display device according to claim 1, wherein thefirst insulating film is made of multiple layers of AlOx.
 7. The displaydevice according to claim 1, wherein the display device is a liquidcrystal display device.
 8. The display device according to claim 1,wherein the display device is an organic EL display device.